Heliyon 6(6):e04177Īlsaad AM, Al-Bataineh QM, Qattan IA, Ahmad AA, Ababneh A, Albataineh Z, Telfah A (2020) Measurement and ab initio investigation of structural, electronic, optical, and mechanical properties of sputtered aluminum nitride thin films. Superlattices Microstruct 85:67–81Īl-Bataineh QM, Alsaad AM, Ahmad AA, Telfah A (2020) A novel optical model of the experimental transmission spectra of nanocomposite PVC-PS hybrid thin films doped with silica nanoparticles. J Appl Phys 100(11):114318Īkl AA, Hassanien AS (2015) Microstructure and crystal imperfections of nanosized CdSxSe1− X thermally evaporated thin films. Appl Phys A 124(6):458Īkiyama M, Morofuji Y, Kamohara T, Nishikubo K, Tsubai M, Fukuda O, Ueno N (2006) Flexible piezoelectric pressure sensors using oriented aluminum nitride thin films prepared on polyethylene terephthalate films. Thin Solid Films 693:137701Īhmad AA, Alsaad AM, Al-Bataineh QM, Al-Naafa MA (2018) Optical and structural investigations of dip-synthesized boron-doped ZnO-seeded platforms for ZnO nanostructures. Mater Sci Eng, B 172(3):253–258Ībabneh A, Albataineh Z, Dagamseh AMK, Al-kofahi IS, Schäfer B, Zengerle T, Seidel H (2020) Optical characterization of sputtered aluminum nitride thin films–correlating refractive index with degree of c-axis orientation. The dispersion of the refractive index is investigated according to the Wemple–DiDomenico single oscillator model and the model parameters (such as effective single oscillator \(\) and optical moments) were estimated accordingly.Ībabneh A, Schmid U, Hernando J, Sánchez-Rojas JL, Seidel H (2010) The influence of sputter deposition parameters on piezoelectric and mechanical properties of AlN thin films. This results in widening the optical bandgap and decreasing both the refractive index and the extinction coefficient. The results have shown that an increase in the sputtering pressure leads to a shift of the threshold transmittance towards the lower wavelength range. The optical properties of AlN thin-films, deposited on glass substrates, were analyzed by means of transmittance and absorption spectra using a UV–Vis spectrophotometer. They confirmed the hexagonal wurtzite structure of AlN thin-films and the increase in the degree of c-axis orientation as the sputtering pressure decreases. XRD measurements were utilized to determine the structural properties of the deposited AlN thin-films such as strain, stress, crystallite size, and crystalline density. The influence of varying sputtering pressure on the structural and optical properties of AlN thin-films was investigated. Aluminium nitride thin-films (AlN) were fabricated by a DC-magnetron sputtering technique at different background pressures while maintaining the same deposition conditions.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |